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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT5401ZPT CURRENT 0.5 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 *PNP SILICON Transistor 0.9+0.2 MARKING * ZFP 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E (2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. -160 -150 -5.0 -500 2.0 +150 150 +150 UNIT V V V mA W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHT5401ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = -100 V VEB=3.0V IC = -1.0 mA; VCE = -5V IC = -10mA; VCE = 5V IC =- 50 mA; VCE =5V - - 50 60 50 - - 240 MIN. MAX. -50 -50 UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance IC = -10 mA; IB = -1.0 m A --50 mA; IB = -5.0 m A IC = IC =-10mA; IB=-1.0mA --50 mA; IB = -5.0 m A IC = - - - - -0.2 -0.5 -1.0 -1.0 6.0 200 300 8.0 V V V V pF VBEsat Cob hfe fT F IE = ie = 0; VCB = - 1 0 V; f = 1 MHz - VCE=-10V,IC=-1.0mA,f=1.0KHz 40 100 - transition frequency noise gure IC =- 50 mA; VCE = 1 0 V; f = 1.0 MHz IC = 200 A; VCE = 5 V; RS = 1 0 ; f =10Hz to 15.7KHz MHz dB |
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